INTERFACE STATES AT THE PT SILICIDE-SI INTERFACE

被引：28

作者：

RUBLOFF, GW

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.25.4307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4307 / 4309

页数：3

共 17 条

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[2]

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[3]

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[4]

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[6]

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[9] XPS STUDY OF THE CHEMICAL-STRUCTURE OF THE NICKEL-SILICON INTERFACE [J].

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[10] GEOMETRY-DEPENDENT SI(2P) SURFACE CORE-LEVEL EXCITATIONS FOR SI(111) AND SI(100) SURFACES [J].

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