MECHANISM OF ADHESION IMPROVEMENT IN ION-BEAM MIXED CU/SIO2

被引：4

作者：

CHAE, KH ^{[1
]}

JANG, HG ^{[1
]}

CHOI, IS ^{[1
]}

JUNG, SM ^{[1
]}

KIM, KS ^{[1
]}

KIM, SS ^{[1
]}

WHANG, CN ^{[1
]}

机构：

[1] MOKWON UNIV,DEPT PHYS,TAEJON 301729,SOUTH KOREA

来源：

JOURNAL OF MATERIALS SCIENCE | 1994年 / 29卷 / 03期

关键词：

D O I：

10.1007/BF00445989

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A thin copper layer (35 nm) deposited on SiO2 has been subjected to ion-beam mixing with 80 keV Ar+ at room temperature, 550 and 650 K. Interfacial properties of irradiated samples were investigated using Rutherford backscattering spectroscopy, grazing-angle X-ray diffraction, X-ray photo-electron spectroscopy and scratch testing. The adhesion of the copper film was improved by a factor of three at a dose of 1.5 x 10(16) Ar+ cm-2 by the ion-beam mixing at room temperature, while the high-temperature ion-beam mixing enhanced the adhesion by a factor of five. Ballistic mixing plays a role in the improvement of adhesion for the room-temperature ion mixing, and the creation Of Cu2O phase induced by ion-beam mixing contributes to the enhancement of adhesion at high temperature.

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收藏

页码：749 / 753

页数：5

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