STUDY OF REACTIVE ION ETCHING OF THE SI3N4/GAAS INTERFACE IN CF4 PLASMAS BY X-RAY PHOTOELECTRON-SPECTROSCOPY AND X-RAY PHOTOELECTRON DIFFRACTION

被引：10

作者：

ALNOT, P ^{[1
]}

OLIVIER, J ^{[1
]}

WYCZISK, F ^{[1
]}

JOUBARD, R ^{[1
]}

机构：

[1] THOMSON SC, DAG, F-91401 ORSAY, FRANCE

来源：

关键词：

D O I：

10.1149/1.2097363

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2361 / 2367

页数：7

共 39 条

[1] ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY FOR THE CHARACTERIZATION OF GAAS(001) SURFACES
ALNOT, P
OLIVIER, J
WYCZISK, F
FADLEY, CS
[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1987, 43 (3-4) : 263 - 286
[2] ASAKAWA K, 1986, I PHYS C SER, V79, P373
[3] Band I. M., 1979, Atomic Data and Nuclear Data Tables, V23, P443, DOI 10.1016/0092-640X(79)90027-5
[4] Barin I., 2013, THERMOCHEMICAL PROPE
[5] REACTIVE ION ETCHING OF GAAS USING CCL2F2 AND THE EFFECT OF AR ADDITION
CHAPLART, J
FAY, B
LINH, NT
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1050 - 1052
[6] CHEN CL, 1982, IEEE T ELECTRON DEV, V29, P1522, DOI 10.1109/T-ED.1982.20909
[7] TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA
DONNELLY, VM
FLAMM, DL
TU, CW
IBBOTSON, DE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2533 - 2537
[8] EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656
[9] Gelius U., 1970, Physica Scripta, V2, DOI 10.1088/0031-8949/2/1-2/014
[10] ION-BEAM DAMAGE EFFECTS DURING THE LOW-ENERGY CLEANING OF GAAS
GHANDHI, SK
KWAN, P
BHAT, KN
BORREGO, JM
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (02): : 48 - 50