SIMULATION OF THIN-FILM GROWTH

被引：14

作者：

HRACH, R

机构：

[1] Department of Electronics and Vacuum Physics, Praha 8, 180 00

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1990年 / 69卷 / 01期

关键词：

D O I：

10.1080/00207219008920291

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A short review is presented of various models used for computer simulation of the initial stages of the nucleation and growth of metals on dielectric substrates. Attention is devoted to both the algorithms used and the results obtained. In the second part of the paper, a simple atomistic model is proposed and some new possibilities for such kinds of model are shown. © 1990 Taylor & Francis Ltd.

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页码：55 / 64

页数：10

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