INSITU CHARACTERIZATION OF THE INITIAL GROWTH STAGE OF GAAS ON SI BY COAXIAL IMPACT-COLLISION ION-SCATTERING SPECTROSCOPY

被引：9

作者：

HASHIMOTO, A ^{[1
]}

SUGIYAMA, N ^{[1
]}

TAMURA, M ^{[1
]}

机构：

[1] TOSHIBA CO LTD,TOSHIBA RES & DEV CTR,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

INSITU CHARACTERIZATION; INITIAL GROWTH STAGE; GAAS ON SI; CAICISS;

D O I：

10.1143/JJAP.30.3755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial growth stage of GaAs on Si has been characterized in situ by coaxial impact-collision ion scattering spectroscopy (CAICISS). The behavior of As atoms on the Si surface and at the step sites is analyzed. The results of analysis on the initial growth stage strongly suggest that the three-dimensional island growth of GaAs on Si occurs even in 1-monolayer (ML) GaAs growth.

引用

页码：3755 / 3758

页数：4

共 8 条

[1] QUANTITATIVE SURFACE ATOMIC GEOMETRY AND TWO-DIMENSIONAL SURFACE ELECTRON-DISTRIBUTION ANALYSIS BY A NEW TECHNIQUE IN LOW-ENERGY ION-SCATTERING
AONO, M
OSHIMA, C
ZAIMA, S
OTANI, S
ISHIZAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L829 - L832
[2] INTERACTION POTENTIAL BETWEEN HE+ AND TI IN A KEV RANGE AS REVEALED BY A SPECIALIZED TECHNIQUE IN ION-SCATTERING SPECTROSCOPY
AONO, M
HOU, Y
SOUDA, R
OSHIMA, C
OTANI, S
ISHIZAWA, Y
MATSUDA, K
SHIMIZU, R
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11): : L670 - L672
[3] RECONSTRUCTIONS OF GAAS(1BAR1BAR1BAR) SURFACES OBSERVED BY SCANNING TUNNELING MICROSCOPY
BIEGELSEN, DK
BRINGANS, RD
NORTHRUP, JE
SWARTZ, LE
[J]. PHYSICAL REVIEW LETTERS, 1990, 65 (04) : 452 - 455
[4] INITIAL-STAGE AND DOMAIN-STRUCTURE OF GAAS GROWN ON SI(100) BY MOLECULAR-BEAM EPITAXY
KAWABE, M
UEDA, T
TAKASUGI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (02): : L114 - L116
[5] THE GROWTH OF SINGLE DOMAIN GAAS FILMS ON DOUBLE DOMAIN SI(001) SUBSTRATES BY MOLECULAR-BEAM EPITAXY
KAWANAMI, H
HATAYAMA, A
NAGAI, K
HAYASHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (03): : L173 - L175
[6] INSITU LOW-ENERGY ION-SCATTERING ANALYSIS OF INP SURFACE DURING MOLECULAR-BEAM EPITAXY
KUBO, M
NARUSAWA, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 697 - 700
[7] A NOVEL INSITU MOLECULAR-BEAM EPITAXY MONITORING-SYSTEM USING LOW-ENERGY ION-SCATTERING
KUBO, M
NARUSAWA, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 136 - 140
[8] INSITU ANALYSIS OF GALLIUM-ARSENIDE SURFACES BY COAXIAL IMPACT COLLISION ION-SCATTERING SPECTROSCOPY WITH AN OFF-AXIS ION-SOURCE
SUGIYAMA, N
HASHIMOTO, A
TAMURA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (10): : L1922 - L1925

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