NEGATIVE-RESISTANCE CHARACTERISTICS IN TUNNELING EXPERIMENTS ON METALLIC SAMPLES

被引：4

作者：

GARCIA, R ^{[1
]}

机构：

[1] UNIV NEW MEXICO,DEPT CHEM,ALBUQUERQUE,NM 87131

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 02期

关键词：

D O I：

10.1116/1.585555

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Scanning tunneling microscopy experiments on specific semiconducting samples show negative resistance characteristics. It is predicted that similar behavior can be achieved on metallic samples. The requirement for those samples is the existence of a bulk band gap for electron momentum perpendicular to sample surface. Calculations for a tip-vacuum-Ni(100) junction have been performed. In this system, negative resistance characteristics arise due to the presence of localized surface barrier states. Another property of those systems is that negative resistance disappears with increasing temperature.

引用

页码：500 / 502

页数：3

共 11 条

[1] DEMONSTRATION OF THE TUNNEL-DIODE EFFECT ON AN ATOMIC SCALE [J].