DEEP-LEVEL-NOISE SPECTROSCOPY OF ION-IMPLANTED POLYSILICON THIN-FILMS

被引:7
作者
MADENACH, AJ
WERNER, J
机构
来源
PHYSICAL REVIEW B | 1988年 / 38卷 / 03期
关键词
D O I
10.1103/PhysRevB.38.1958
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1958 / 1962
页数:5
相关论文
共 20 条
[11]  
MADENACH AJ, UNPUB
[12]  
MADENACH AJ, 1985, 1985 IEEE PHOT VOLT, P1088
[13]   TEMPERATURE-DEPENDENCE OF ELECTRICAL TRANSPORT-PROPERTIES OF N-TYPE SOLAR GRADE POLYCRYSTALLINE SILICON [J].
MATHUR, PC ;
SHARMA, RP ;
SHRIVASTAVA, R ;
SAXENA, P ;
KOTNALA, RK .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :3913-3920
[14]  
PEISL M, 1983, THESIS TU MUNICH
[15]   DC VOLTAGE DEPENDENCE OF SEMICONDUCTOR GRAIN-BOUNDARY RESISTANCE [J].
PIKE, GE ;
SEAGER, CH .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3414-3422
[16]   DECOMPOSITION OF GENERATION-RECOMBINATION NOISE SPECTRA IN SEPARATE LORENTZIANS [J].
VANRHEENEN, AD ;
BOSMAN, G ;
VANVLIET, CM .
SOLID-STATE ELECTRONICS, 1985, 28 (05) :457-463
[17]  
VANVLIET KM, 1965, FLUCTUATION PHENOMEN, P268
[18]  
Werner J., 1985, Polycrystalline Semiconductors: Physical Properties and Applications. Proceedings of the International School of Materials Science and Technology, P76
[19]   EXPONENTIAL BAND TAILS IN POLYCRYSTALLINE SEMICONDUCTOR-FILMS [J].
WERNER, J ;
PEISL, M .
PHYSICAL REVIEW B, 1985, 31 (10) :6881-6883
[20]  
WERNER J, 1982, SOLID STATE COMMUN, V42, P415, DOI 10.1016/0038-1098(82)90962-0