SI MIGRATION EFFECTS IN GAAS/(AL,GA)AS HETEROJUNCTION AND DELTA-DOPED STRUCTURES

被引：17

作者：

HARRIS, JJ

BEALL, RB

CLEGG, JB

FOXON, CT

BATTERSBY, SJ

LACKLISON, DE

DUGGAN, G

HELLON, CM

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90396-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：257 / 259

页数：3

相关论文

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