AN INTRINSIC BASE RESISTANCE MODEL FOR LOW AND HIGH CURRENTS

被引:11
作者
JO, M
BURK, DE
机构
[1] Department of Electrical Engineering, University of Florida, Gainesville, FL
关键词
D O I
10.1109/16.43817
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A highly physical model of the intrinsic base resistance for a bipolar junction transistor, which includes emitter crowding, base pushout, and conductivity modulation, and which is compatible with the charge-based large-signal bipolar transistor model, is presented. This model, which is an extension of the Hauser model, is derived from a power dissipation calculation and verified with PISCES simulations of the low- to high-current region. It is then implemented in SLICE for CAD. © 1990 IEEE
引用
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页码:202 / 209
页数:8
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