A CHARGE-BASED LARGE-SIGNAL BIPOLAR-TRANSISTOR MODEL FOR DEVICE AND CIRCUIT SIMULATION

[1] NEW FORMULATION OF THE CURRENT AND CHARGE RELATIONS IN BIPOLAR-TRANSISTOR MODELING FOR CACD PURPOSES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2415 - 2419

[2] PARTITIONED-CHARGE-BASED MODELING OF BIPOLAR-TRANSISTORS FOR NON-QUASI-STATIC CIRCUIT SIMULATION [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 652 - 654

[3] FOSSUM JG, 1988, MAY IEEE NUPAD 2 WOR

[4] FOSSUM JG, 1987, SEP IEEE BIP CIRC TE

[5] GETREU IE, 1978, MODELING BIPOLAR TRA

[6] HWANG BY, 1987, SEP IEEE BIP CIRC TE

[7] JEONG H, 1988, SEP IEEE BIP CIRC TE

[8] JEONG HG, 1987, IEEE T ELECTRON DEV, V34, P898, DOI 10.1109/T-ED.1987.23013

[9] KNEPPER RW, 1987, SEP IEEE BIP CIRC TE

[10] A UNIFIED CIRCUIT MODEL FOR BIPOLAR-TRANSISTORS INCLUDING QUASI-SATURATION EFFECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1103 - 1113

[1] NEW FORMULATION OF THE CURRENT AND CHARGE RELATIONS IN BIPOLAR-TRANSISTOR MODELING FOR CACD PURPOSES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2415 - 2419

[2] PARTITIONED-CHARGE-BASED MODELING OF BIPOLAR-TRANSISTORS FOR NON-QUASI-STATIC CIRCUIT SIMULATION [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 652 - 654

[3] FOSSUM JG, 1988, MAY IEEE NUPAD 2 WOR

[4] FOSSUM JG, 1987, SEP IEEE BIP CIRC TE

[5] GETREU IE, 1978, MODELING BIPOLAR TRA

[6] HWANG BY, 1987, SEP IEEE BIP CIRC TE

[7] JEONG H, 1988, SEP IEEE BIP CIRC TE

[8] JEONG HG, 1987, IEEE T ELECTRON DEV, V34, P898, DOI 10.1109/T-ED.1987.23013

[9] KNEPPER RW, 1987, SEP IEEE BIP CIRC TE

[10] A UNIFIED CIRCUIT MODEL FOR BIPOLAR-TRANSISTORS INCLUDING QUASI-SATURATION EFFECTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1103 - 1113