PARTITIONED-CHARGE-BASED MODELING OF BIPOLAR-TRANSISTORS FOR NON-QUASI-STATIC CIRCUIT SIMULATION

[1] CHEN MK, 1986, THESIS U FLORIDA GAI

[2] SIGNIFICANCE OF THE CHANNEL CHARGE PARTITION IN THE TRANSIENT MOSFET MODEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1621 - 1623

[3] GETREU IE, 1978, MODELING BIPOLAR TRA

[4] LINDMAYER J, 1965, FUNDAMENTALS SEMICON

[5] NAGEL LW, 1975, ERLM520 U CAL EL RES

[6] PAULOS JJ, 1983, IEEE ELECTR DEVICE L, V4, P221, DOI 10.1109/EDL.1983.25712

[7] VANDERZIEL A, 1976, SOLID STATE PHYSICAL

[8] SPICE SIMULATION OF SOI MOSFET INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1986, 5 (04) : 653 - 658

[9] CHARGE-ORIENTED MODEL FOR MOS-TRANSISTOR CAPACITANCES [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (05) : 703 - 708

[1] CHEN MK, 1986, THESIS U FLORIDA GAI

[2] SIGNIFICANCE OF THE CHANNEL CHARGE PARTITION IN THE TRANSIENT MOSFET MODEL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) : 1621 - 1623

[3] GETREU IE, 1978, MODELING BIPOLAR TRA

[4] LINDMAYER J, 1965, FUNDAMENTALS SEMICON

[5] NAGEL LW, 1975, ERLM520 U CAL EL RES

[6] PAULOS JJ, 1983, IEEE ELECTR DEVICE L, V4, P221, DOI 10.1109/EDL.1983.25712

[7] VANDERZIEL A, 1976, SOLID STATE PHYSICAL

[8] SPICE SIMULATION OF SOI MOSFET INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1986, 5 (04) : 653 - 658

[9] CHARGE-ORIENTED MODEL FOR MOS-TRANSISTOR CAPACITANCES [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (05) : 703 - 708