A UNIFIED CIRCUIT MODEL FOR BIPOLAR-TRANSISTORS INCLUDING QUASI-SATURATION EFFECTS

[1] MODELING OF VHF AND MICROWAVE-POWER TRANSISTORS OPERATING IN QUASI-SATURATION [J]. SOLID-STATE ELECTRONICS, 1982, 25 (08) : 723 - 731

[2] EQUIVALENT CIRCUIT OF A TRANSISTOR WITH A LIGHTLY DOPED COLLECTOR OPERATING IN SATURATION [J]. SOLID-STATE ELECTRONICS, 1968, 11 (02) : 241 - +

[3] EXPERIMENTAL-DETERMINATION OF FORWARD-BIASED EMITTER-BASE CAPACITANCE [J]. SOLID-STATE ELECTRONICS, 1978, 21 (06) : 833 - 836

[4] HIGH-CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 257 - 263

[5] ELECTRON AND HOLE DRIFT VELOCITY-MEASUREMENTS IN SILICON AND THEIR EMPIRICAL RELATION TO ELECTRIC-FIELD AND TEMPERATURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1045 - 1047

[6] SATURATION CHARACTERISTICS OF N-P-GAMMA-N POWER TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (10) : 843 - +

[7] de Graaff H. C., 1971, Philips Research Reports, V26, P191

[8] COLLECTOR MODELS FOR BIPOLAR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 587 - 600

[9] DEGRAAFF HC, 1977, NATO ADV STUDY I SER, P419

[10] Engl W. L., 1982, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, VCAD-1, P85, DOI 10.1109/TCAD.1982.1269998

[1] MODELING OF VHF AND MICROWAVE-POWER TRANSISTORS OPERATING IN QUASI-SATURATION [J]. SOLID-STATE ELECTRONICS, 1982, 25 (08) : 723 - 731

[2] EQUIVALENT CIRCUIT OF A TRANSISTOR WITH A LIGHTLY DOPED COLLECTOR OPERATING IN SATURATION [J]. SOLID-STATE ELECTRONICS, 1968, 11 (02) : 241 - +

[3] EXPERIMENTAL-DETERMINATION OF FORWARD-BIASED EMITTER-BASE CAPACITANCE [J]. SOLID-STATE ELECTRONICS, 1978, 21 (06) : 833 - 836

[4] HIGH-CURRENT REGIMES IN TRANSISTOR COLLECTOR REGIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (03) : 257 - 263

[5] ELECTRON AND HOLE DRIFT VELOCITY-MEASUREMENTS IN SILICON AND THEIR EMPIRICAL RELATION TO ELECTRIC-FIELD AND TEMPERATURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (11) : 1045 - 1047

[6] SATURATION CHARACTERISTICS OF N-P-GAMMA-N POWER TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (10) : 843 - +

[7] de Graaff H. C., 1971, Philips Research Reports, V26, P191

[8] COLLECTOR MODELS FOR BIPOLAR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 587 - 600

[9] DEGRAAFF HC, 1977, NATO ADV STUDY I SER, P419

[10] Engl W. L., 1982, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, VCAD-1, P85, DOI 10.1109/TCAD.1982.1269998