SATURATION CHARACTERISTICS OF N-P-GAMMA-N POWER TRANSISTORS

被引:15
作者
CHUDOBIAK, WJ
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D O I
10.1109/T-ED.1970.17085
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:843 / +
页数:1
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共 20 条
[1]   EQUIVALENT CIRCUIT OF A TRANSISTOR WITH A LIGHTLY DOPED COLLECTOR OPERATING IN SATURATION [J].
BEALE, JRA ;
SLATTER, JAG .
SOLID-STATE ELECTRONICS, 1968, 11 (02) :241-+
[2]   OPTIMUM LENGTH OF EMITTER STRIPES IN COMB STRUCTURE TRANSISTORS [J].
CAVE, KJS ;
BARNES, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (02) :84-&
[3]   ON CROWDING EFFECTS AND FAILURE MECHANISMS IN HIGH POWER TRANSISTOR SWITCHES [J].
CHUDOBIA.WJ .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (12) :2176-&
[4]   ON STATIC COLLECTOR-EMITTER SATURATION VOLTAGE OF A TRANSISTOR WITH A LIGHTLY DOPED COLLECTOR [J].
CHUDOBIAK, WJ .
PROCEEDINGS OF THE IEEE, 1969, 57 (04) :718-+
[5]  
CHUDOBIAK WJ, 1970, MICROELECTRON RELIAB, P75
[6]  
CHUDOBIAK WJ, 1969, THESIS CARLETON U
[7]   CHARACTERISTICS OF 2-REGION SATURATION PHENOMENA [J].
CLARK, LE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) :113-&
[8]  
EVANS DM, 1959, J ELECTRON CONTR, V6, P204
[9]   EFFECT OF COLLECTOR RESISTANCE UPON HIGH CURRENT CAPABILITY OF N-P-V-N TRANSISTORS [J].
HAHN, LA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (07) :654-+
[10]   SATURATION CHARACTERISTICS OF HIGH-VOLTAGE TRANSISTORS [J].
HAHN, LA .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1384-&