EFFECT OF COLLECTOR RESISTANCE UPON HIGH CURRENT CAPABILITY OF N-P-V-N TRANSISTORS

被引：20

作者：

HAHN, LA

机构：

[1] Semiconductor Research and Development Laboratory, Texas Instruments Incoroorated, Dallas., Tex.

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 07期

关键词：

D O I：

10.1109/T-ED.1969.16829

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that the onset of conductivity modulation of the bulk collector resistance causes an abrupt decrease in hFR at high current density and consequently limits the current range in which a transistor exhibits usable gain. Data are presented which demonstrate the accurate measurement of equilibrium collector resistance from a curve-tracer display. Experimental resuming showing the effect of partial saturation upon transistor switching time are also presented. Recognition of this phenomenon suggests a reappraisal of the importance of other potential causes of high current hFE decrease, Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：654 / +

页数：1

共 10 条

[1] EQUIVALENT CIRCUIT OF A TRANSISTOR WITH A LIGHTLY DOPED COLLECTOR OPERATING IN SATURATION [J].