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PRELIMINARY RESULTS ON GE-SNO2-AG SPACE CHARGE STRUCTURES
被引:1
作者
:
FILLARD, JP
论文数:
0
引用数:
0
h-index:
0
FILLARD, JP
LECOY, G
论文数:
0
引用数:
0
h-index:
0
LECOY, G
BONNET, G
论文数:
0
引用数:
0
h-index:
0
BONNET, G
MANIFACI.JC
论文数:
0
引用数:
0
h-index:
0
MANIFACI.JC
RIGAUD, D
论文数:
0
引用数:
0
h-index:
0
RIGAUD, D
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1971年
/ 14卷
/ 05期
关键词
:
D O I
:
10.1016/0038-1101(71)90188-2
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:389 / &
相关论文
共 7 条
[1]
NOISE AND EQUIVALENT CIRCUIT OF DOUBLE INJECTION
BILGER, HR
论文数:
0
引用数:
0
h-index:
0
BILGER, HR
LEE, DH
论文数:
0
引用数:
0
h-index:
0
LEE, DH
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
MCCARTER, ER
论文数:
0
引用数:
0
h-index:
0
MCCARTER, ER
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(13)
: 5913
-
&
[2]
DOUBLE INJECTION AND HIGH FREQUENCY NOISE IN GERMANIUM DIODES
DRIEDONKS, F
论文数:
0
引用数:
0
h-index:
0
DRIEDONKS, F
ZIJLSTRA, RJ
论文数:
0
引用数:
0
h-index:
0
ZIJLSTRA, RJ
ALKEMADE, CT
论文数:
0
引用数:
0
h-index:
0
ALKEMADE, CT
[J].
APPLIED PHYSICS LETTERS,
1967,
11
(10)
: 318
-
+
[3]
DRIEDONKS F, 1968, P C PHYS ASPECTS NOI, P95
[4]
FILLARD J. P., 1970, JPN J APPL PHYS, V9, P8
[5]
ELECTRICAL AND OPTICAL PROPERTIES OF SNO2-SI HETEROJUNCTIONS
KAJIYAMA, K
论文数:
0
引用数:
0
h-index:
0
KAJIYAMA, K
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1967,
6
(07)
: 905
-
&
[6]
DOUBLE INJECTION IN INSULATORS
LAMPERT, MA
论文数:
0
引用数:
0
h-index:
0
LAMPERT, MA
[J].
PHYSICAL REVIEW,
1962,
125
(01):
: 126
-
&
[7]
NEGATIVE RESISTANCE IN CHROMIUM-DOPED GAAS P-I-N DIODES
SELWAY, PR
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Ltd., Harlow, Essex
SELWAY, PR
NICOLLE, WM
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Ltd., Harlow, Essex
NICOLLE, WM
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(10)
: 4087
-
&
←
1
→
共 7 条
[1]
NOISE AND EQUIVALENT CIRCUIT OF DOUBLE INJECTION
BILGER, HR
论文数:
0
引用数:
0
h-index:
0
BILGER, HR
LEE, DH
论文数:
0
引用数:
0
h-index:
0
LEE, DH
NICOLET, MA
论文数:
0
引用数:
0
h-index:
0
NICOLET, MA
MCCARTER, ER
论文数:
0
引用数:
0
h-index:
0
MCCARTER, ER
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(13)
: 5913
-
&
[2]
DOUBLE INJECTION AND HIGH FREQUENCY NOISE IN GERMANIUM DIODES
DRIEDONKS, F
论文数:
0
引用数:
0
h-index:
0
DRIEDONKS, F
ZIJLSTRA, RJ
论文数:
0
引用数:
0
h-index:
0
ZIJLSTRA, RJ
ALKEMADE, CT
论文数:
0
引用数:
0
h-index:
0
ALKEMADE, CT
[J].
APPLIED PHYSICS LETTERS,
1967,
11
(10)
: 318
-
+
[3]
DRIEDONKS F, 1968, P C PHYS ASPECTS NOI, P95
[4]
FILLARD J. P., 1970, JPN J APPL PHYS, V9, P8
[5]
ELECTRICAL AND OPTICAL PROPERTIES OF SNO2-SI HETEROJUNCTIONS
KAJIYAMA, K
论文数:
0
引用数:
0
h-index:
0
KAJIYAMA, K
FURUKAWA, Y
论文数:
0
引用数:
0
h-index:
0
FURUKAWA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1967,
6
(07)
: 905
-
&
[6]
DOUBLE INJECTION IN INSULATORS
LAMPERT, MA
论文数:
0
引用数:
0
h-index:
0
LAMPERT, MA
[J].
PHYSICAL REVIEW,
1962,
125
(01):
: 126
-
&
[7]
NEGATIVE RESISTANCE IN CHROMIUM-DOPED GAAS P-I-N DIODES
SELWAY, PR
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Ltd., Harlow, Essex
SELWAY, PR
NICOLLE, WM
论文数:
0
引用数:
0
h-index:
0
机构:
Standard Telecommunication Laboratories Ltd., Harlow, Essex
NICOLLE, WM
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(10)
: 4087
-
&
←
1
→