NEW APPROACHES TO EPITAXY OF TRANSITION-METALS AND RARE-EARTHS - HETEROEPITAXY ON LATTICE-MATCHED BUFFER FILMS ON SEMICONDUCTORS

被引：43

作者：

FARROW, RFC

PARKIN, SSP

SPERIOSU, VS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.342404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5315 / 5320

页数：6

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