SILICON VACANCY - POSSIBLE ANDERSON NEGATIVE-U SYSTEM

被引:192
作者
BARAFF, GA
KANE, EO
SCHLUTER, M
机构
[1] Bell Laboratories, Murray Hill
关键词
D O I
10.1103/PhysRevLett.43.956
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This Letter analyzes the electron states associated with the silicon vacancy and proposes a distortion model for the surrounding atoms that is derived from self-consistent calculations for single-particle states and from model calculations of elastic restoring forces. The predicted level structure is such that V+ is, contrary to currently accepted ideas, a metastable state which decays either to V0 or to V++, depending on the Fermi energy. © 1979 The American Physical Society.
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页码:956 / 959
页数:4
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