CHEMICAL ETCHING OF SI(111)-(7X7) AND AL/SI(111) BY ATOMIC-HYDROGEN

被引：10

作者：

KAO, CT

DUBOIS, LH

NUZZO, RG

机构：

[1] AT&T Bell Laboratories, Murray Hill, New Jersey

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 02期

关键词：

D O I：

10.1116/1.577526

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have observed an etching reaction on the Al/Si(111) surface (theta-Al greater-than-or-equal-to 1) induced by the chemisorption of atomic hydrogen at low temperature (T = 250-400 K). The major silicon containing product detected by temperature programmed desorption (TPD) is silane (SiH4). An approximate sixfold increase in silane production is observed in the presence of aluminum, with a decrease in the TPD peak temperature from 645 K on Si(111) to 335 K on Al/Si(111). A kinetic model is presented to explain this catalyzed etching reaction.

引用

页码：228 / 231

页数：4

共 24 条

[1] SURFACE ORGANOMETALLIC CHEMISTRY IN THE CHEMICAL VAPOR-DEPOSITION OF ALUMINUM FILMS USING TRIISOBUTYLALUMINUM - BETA-HYDRIDE AND BETA-ALKYL ELIMINATION-REACTIONS OF SURFACE ALKYL INTERMEDIATES [J].