POSSIBILITY OF ELECTRON-HOLE LIQUID FORMATION IN GAAS

被引：2

作者：

ROMANEK, KM

GOEBEL, EO

HILDEBRAND, O

WEBER, H

机构：

[1] IV. Physikalisches Institut, Universität Stuttgart

来源：

JOURNAL OF LUMINESCENCE | 1979年 / 18-9卷 / JAN期

关键词：

D O I：

10.1016/0022-2313(79)90130-3

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

At low effective carrier temperatures electron-hole liquid formation would be expected in GaAs due to the experimental value of the electron-hole plasma binding energy (Φexp = 4.8 meV) which lies approximately 3 meV lower than theoretically expected. However, experimentally no evidence for the formation of a liquid is found: The carrier density is proportional to the temperature down to 7 K. © 1979.

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页码：317 / 321

页数：5

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