UNINTENTIONAL HYDROGEN CONCENTRATION IN LIQUID ENCAPSULATION CZOCHRALSKI GROWN III-V COMPOUNDS

被引：25

作者：

CLERJAUD, B ^{[1
]}

COTE, D ^{[1
]}

NAUD, C ^{[1
]}

GAUNEAU, M ^{[1
]}

CHAPLAIN, R ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN, LAB, OCM, F-22301 LANNION, FRANCE

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 23期

关键词：

D O I：

10.1063/1.105818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

From a combined secondary ion mass spectroscopic and optical absorption investigation, the unintentional hydrogen concentration in III-V compounds grown by the liquid encapsulation Czochralski technique is shown to be about 10(16) cm-3. In GaAs materials annealed for few hours at high temperature, this concentration is only in the 10(13) cm-3 range.

引用

页码：2980 / 2982

页数：3

共 25 条

[1] PASSIVATION OF ZINC ACCEPTORS IN INP BY ATOMIC-HYDROGEN COMING FROM ARSINE DURING METALORGANIC VAPOR-PHASE EPITAXY [J].

ANTELL, GR ;

BRIGGS, ATR ;

BUTLER, BR ;

KITCHING, SA ;

STAGG, JP ;

CHEW, A ;

SYKES, DE .

APPLIED PHYSICS LETTERS, 1988, 53 (09) :758-760

[2]

BAUMGARTNER M, 1990, SEMI-INSULATING III-V MATERIALS, TORONTO 1990, P225

[3] NEUTRALIZATION OF DEFECTS AND DOPANTS IN III-V SEMICONDUCTORS [J].

CHEVALLIER, J ;

CLERJAUD, B ;

PAJOT, B .

SEMICONDUCTORS AND SEMIMETALS, 1991, 34 (0C) :447-510

[4]

CLEGG JB, 1987, 6TH P INT C SEC ION, P689

[5] UNINTENTIONAL HYDROGEN INCORPORATION IN CRYSTALS [J].

CLERJAUD, B .

PHYSICA B-CONDENSED MATTER, 1991, 170 (1-4) :383-391

[6] ELECTRONIC LEVEL OF HYDROGEN AND THERMAL-STABILITY OF HYDROGEN RELATED COMPLEXES IN GAAS [J].

CLERJAUD, B ;

GENDRON, F ;

KRAUSE, M ;

NAUD, C ;

ULRICI, W .

PHYSICA B-CONDENSED MATTER, 1991, 170 (1-4) :417-420

[7] ELECTRONIC LEVEL OF INTERSTITIAL HYDROGEN IN GAAS [J].

CLERJAUD, B ;

GENDRON, F ;

KRAUSE, M ;

ULRICI, W .

PHYSICAL REVIEW LETTERS, 1990, 65 (14) :1800-1803

[8] CARBON-HYDROGEN COMPLEX IN GAP [J].

CLERJAUD, B ;

COTE, D ;

HAHN, WS ;

ULRICI, W .

APPLIED PHYSICS LETTERS, 1991, 58 (17) :1860-1862

[9] EVIDENCE FOR HYDROGEN TRANSITION-METAL COMPLEXES IN AS-GROWN INDIUM-PHOSPHIDE [J].

CLERJAUD, B ;

COTE, D ;

NAUD, C .

JOURNAL OF CRYSTAL GROWTH, 1987, 83 (02) :190-193

[10] EVIDENCE FOR COMPLEXES OF HYDROGEN WITH DEEP-LEVEL DEFECTS IN BULK III-V MATERIALS [J].

CLERJAUD, B ;

COTE, D ;

NAUD, C .

PHYSICAL REVIEW LETTERS, 1987, 58 (17) :1755-1757

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