ELECTRONIC LEVEL OF HYDROGEN AND THERMAL-STABILITY OF HYDROGEN RELATED COMPLEXES IN GAAS

被引：8

作者：

CLERJAUD, B ^{[1
]}

GENDRON, F ^{[1
]}

KRAUSE, M ^{[1
]}

NAUD, C ^{[1
]}

ULRICI, W ^{[1
]}

机构：

[1] ZENT INST ELEKT PHYS, O-1086 BERLIN, GERMANY

来源：

PHYSICA B-CONDENSED MATTER | 1991年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/0921-4526(91)90155-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Migrating hydrogen in GaAs has an electronic level located 0.5 eV above the top of the valence band. The carbon-hydrogen complexes observed in unintentionally doped LEC grown materials are stable up to at least 450-degrees-C. Hydrogen-lattice defect complexes are stable up to 600-650-degrees-C in as-grown LEC samples.

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页码：417 / 420

页数：4

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