DEPTH PROFILES OF STRAIN IN IN0.10GA0.90AS/GAAS MULTIQUANTUM-WELL STRUCTURES OBTAINED BY VARIABLE-PUMP WAVELENGTH PHOTOLUMINESCENCE

被引：5

作者：

GRIFFITHS, CO

COOPER, SL

KLEIN, MV

FORBES, DV

COLEMAN, JJ

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 15期

关键词：

D O I：

10.1063/1.110560

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed photoluminescence measurements probing the strain in a set of In0.10Ga0.90As/GaAs multiquantum well (MQW) samples. By using different continuous wave pump laser wavelengths we obtain a depth profile of strain in individual quantum wells within the MQW structure. We also present evidence for the existence of an equilibrium strain between In0.10Ga0.90As quantum well layers and GaAs barrier layers for thick strain-relaxed MQW structures.

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收藏

页码：2123 / 2125

页数：3

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