STRAIN DETERMINATION IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES BY PHOTOMODULATED REFLECTANCE

被引：13

作者：

INOKI, CK ^{[1
]}

LEMOS, V ^{[1
]}

CERDEIRA, F ^{[1
]}

VASQUEZLOPEZ, C ^{[1
]}

机构：

[1] UNIV AUTONOMA PUEBLA, INST FIS, PUEBLA, MEXICO

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 07期

关键词：

D O I：

10.1063/1.352973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A series of Raman and photoreflectance measurements was performed on several InxGa1-xAs/GaAs strained-layer superlattices of the same period but of different alloy compositions and substrate orientations. In the photoreflectance spectra the photon energy region containing the E1 and E1 + DELTA1 transitions of the GaAs barrier material is analyzed. Both types of measurements are used in order to estimate of the in-plane strain in these layers. The values obtained by both methods are in good mutual agreement, thus showing that photoreflectance is an effective method for strain determination.

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页码：3266 / 3270

页数：5

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