RAMAN-SCATTERING FROM INGAAS/GAAS STRAINED-LAYER SUPERLATTICES

[1] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (10) : 752 - 754

[2] BRONSKY MH, 1968, PHYS REV LETT, V21, P990

[3] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +

[4] RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1138 - 1140

[5] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[6] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969

[7] STABILITY OF SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 56 - 58

[8] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[9] DETERMINATION OF CRITICAL LAYER THICKNESS IN INXGA1-XAS GAAS HETEROSTRUCTURES BY X-RAY-DIFFRACTION [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 980 - 982

[10] SINGLE LONGITUDINAL-MODE OPTICAL PHONON-SCATTERING IN GA0.47IN0.53AS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 436 - 438

[1] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (10) : 752 - 754

[2] BRONSKY MH, 1968, PHYS REV LETT, V21, P990

[3] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +

[4] RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1138 - 1140

[5] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[6] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969

[7] STABILITY OF SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (01) : 56 - 58

[8] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[9] DETERMINATION OF CRITICAL LAYER THICKNESS IN INXGA1-XAS GAAS HETEROSTRUCTURES BY X-RAY-DIFFRACTION [J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 980 - 982

[10] SINGLE LONGITUDINAL-MODE OPTICAL PHONON-SCATTERING IN GA0.47IN0.53AS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 436 - 438