DETERMINATION OF CRITICAL LAYER THICKNESS IN INXGA1-XAS GAAS HETEROSTRUCTURES BY X-RAY-DIFFRACTION

[1] OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2361 - 2367

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[3] ATOMISTIC MONTE-CARLO CALCULATION OF CRITICAL LAYER THICKNESS FOR COHERENTLY STRAINED SILICON-LIKE STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 642 - 644

[4] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969

[5] GAL M, UNPUB

[6] THE INTERPRETATION OF X-RAY ROCKING CURVES FROM III-V SEMICONDUCTOR-DEVICE STRUCTURES [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) : 523 - 531

[7] DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) : 513 - 517

[8] MADELUNG O, 1985, LANDOLTBORNSTEIN SEM, V17

[9] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[10] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 229 - 229

[1] OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2361 - 2367

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[3] ATOMISTIC MONTE-CARLO CALCULATION OF CRITICAL LAYER THICKNESS FOR COHERENTLY STRAINED SILICON-LIKE STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (11) : 642 - 644

[4] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969

[5] GAL M, UNPUB

[6] THE INTERPRETATION OF X-RAY ROCKING CURVES FROM III-V SEMICONDUCTOR-DEVICE STRUCTURES [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) : 523 - 531

[7] DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) : 513 - 517

[8] MADELUNG O, 1985, LANDOLTBORNSTEIN SEM, V17

[9] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[10] CORRECTION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 229 - 229