PHOTOREFLECTANCE STUDY OF INXGA1-XAS GAAS SINGLE QUANTUM-WELLS

被引：11

作者：

KSENDZOV, A ^{[1
]}

SHEN, H ^{[1
]}

POLLAK, FH ^{[1
]}

BOUR, DP ^{[1
]}

机构：

[1] DAVID SARNOFF RES CTR,PRINCETON,NJ 08543

来源：

SURFACE SCIENCE | 1990年 / 228卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(90)90320-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In order to gain information about the band offset in the strained layer InxGa1-xAs/GaAs system we have investigated photoreflectance (PR) from two single quantum well (SQW) samples at 300 and 77 K. Our samples had well widths Lz=110 A ̊ (sample 1) and Lz=107 A ̊ (sample 2) with x=0.11 (sample 1) and x=0.19 (sample 2). By studying the polarization dependence of the PR at 300 K using an internal reflection mode we have identified spectral features corresponding to conduction to light- and heavy-hole transitions. Good agreement between our experimental results and an envelope function calculation (including strain) is obtained for conduction band offset Qc=0.45 ±0.07 (sample 1) and Qc=0.67±0.07 (sample 2). These values comply with the compositional dependence of Qc proposed by M.J. Joyce et al. [Phys. Rev. B 38 (1988) 10978]. © 1990.

引用

收藏

页码：326 / 329

页数：4

相关论文

共 9 条

[1] ELECTRONIC STATES IN SEMICONDUCTOR HETEROSTRUCTURES [J].

BASTARD, G ;

BRUM, JA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1625-1644

[2] ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES [J].

CHEMLA, DS ;

MILLER, DAB ;

SMITH, PW ;

GOSSARD, AC ;

WIEGMANN, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) :265-275

[3] (INGA)AS-GAAS STRAINED LAYER QUANTUM-WELLS - EXCITONIC PROPERTIES AND ELECTRONIC-STRUCTURE [J].

DUGGAN, G ;

MOORE, KJ ;

WOODBRIDGE, K ;

ROBERTS, C .

SURFACE SCIENCE, 1990, 228 (1-3) :310-313

[4] CONCENTRATION-DEPENDENT BAND OFFSET IN INXGA1-XAS/GAAS STRAINED QUANTUM WELLS [J].

JOYCE, MJ ;

JOHNSON, MJ ;

GAL, M ;

USHER, BF .

PHYSICAL REVIEW B, 1988, 38 (15) :10978-10980

[5] LARGE VALENCE-BAND OFFSET IN STRAINED-LAYER INXGA1-XAS-GAAS QUANTUM-WELLS [J].

MENENDEZ, J ;

PINCZUK, A ;

WERDER, DJ ;

SPUTZ, SK ;

MILLER, RC ;

SIVCO, DL ;

CHO, AY .

PHYSICAL REVIEW B, 1987, 36 (15) :8165-8168

[6] PHOTOREFLECTANCE STUDY OF NARROW-WELL STRAINED-LAYER INXGA1-XAS/GAAS COUPLED MULTIPLE-QUANTUM-WELL STRUCTURES [J].

PAN, SH ;

SHEN, H ;

HANG, Z ;

POLLAK, FH ;

ZHUANG, WH ;

XU, Q ;

ROTH, AP ;

MASUT, RA ;

LACELLE, C ;

MORRIS, D .

PHYSICAL REVIEW B, 1988, 38 (05) :3375-3382

[7] NEW NORMALIZATION PROCEDURE FOR MODULATION SPECTROSCOPY [J].

SHEN, H ;

PARAYANTHAL, P ;

LIU, YF ;

POLLAK, FH .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1987, 58 (08) :1429-1432

[8] INSITU CHEMICAL INFORMATION AT THE SEMICONDUCTOR ELECTROLYTE INTERFACE FROM INFRARED VIBRATIONAL SPECTROSCOPY [J].

TARDELLA, A ;

CHAZALVIEL, JN .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :334-336

[9] PHOTOCURRENT SPECTROSCOPY OF INXGA1-XAS/GAAS MULTIPLE QUANTUM WELLS [J].

YU, PW ;

SANDERS, GD ;

EVANS, KR ;

REYNOLDS, DC ;

BAJAJ, KK ;

STUTZ, CE ;

JONES, RL .

APPLIED PHYSICS LETTERS, 1989, 54 (22) :2230-2232