GAIN-SWITCHING CHARACTERISTICS AND FAST TRANSIENT-RESPONSE OF 3-TERMINAL SIZE-EFFECT MODULATION LASER

被引:21
作者
SUEMUNE, I [1 ]
TAKEOKA, T [1 ]
YAMANISHI, M [1 ]
LEE, Y [1 ]
机构
[1] HIROSHIMA UNIV, DEPT OPTOELECTR, HIROSHIMA 724, JAPAN
关键词
D O I
10.1109/JQE.1986.1073150
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1900 / 1908
页数:9
相关论文
共 21 条
[1]  
[Anonymous], 1978, HETEROSTRUCTURE LASE
[2]  
ASBECK PM, 1984, 16TH C SOL STAT DEV, P343
[3]   DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J].
COLEMAN, JJ ;
DAPKUS, PD ;
KIRKPATRICK, CG ;
CAMRAS, MD ;
HOLONYAK, N .
APPLIED PHYSICS LETTERS, 1982, 40 (10) :904-906
[4]   PICOSECOND MEASUREMENT OF SPONTANEOUS AND STIMULATED-EMISSION FROM INJECTION-LASERS [J].
DUGUAY, MA ;
DAMEN, TC .
APPLIED PHYSICS LETTERS, 1982, 40 (08) :667-669
[5]  
HASHIMOTO H, 1984, 16TH C SOL STAT DEV, P121
[6]  
Iga K., 1985, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE68, P417
[7]  
IKEGAMI T, 1976, P IEEE, V55, P122
[8]   ELECTRIC-FIELD INDUCED DECREASE OF PHOTOLUMINESCENCE LIFETIME IN GAAS QUANTUM WELLS [J].
KASH, JA ;
MENDEZ, EE ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1985, 46 (02) :173-175
[9]   TRANSVERSE-MODAL BEHAVIOR OF A TRANSVERSE JUNCTION STRIPE LASER-EXCITED BY A SHORT ELECTRICAL PULSE [J].
LAU, KY ;
YARIV, A .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :641-645
[10]  
LAU KY, 1985, IEEE J QUANTUM ELECT, V21, P121