GAIN-SWITCHING CHARACTERISTICS AND FAST TRANSIENT-RESPONSE OF 3-TERMINAL SIZE-EFFECT MODULATION LASER

被引：21

作者：

SUEMUNE, I ^{[1
]}

TAKEOKA, T ^{[1
]}

YAMANISHI, M ^{[1
]}

LEE, Y ^{[1
]}

机构：

[1] HIROSHIMA UNIV, DEPT OPTOELECTR, HIROSHIMA 724, JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1986年 / 22卷 / 09期

关键词：

D O I：

10.1109/JQE.1986.1073150

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1900 / 1908

页数：9

共 21 条

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[12]

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[18] TRANSIENT-RESPONSE OF PHOTOLUMINESCENCE FOR ELECTRIC-FIELD IN A GAAS/AL0.7GA0.3AS SINGLE QUANTUM WELL - EVIDENCE FOR FIELD-INDUCED INCREASE IN CARRIER LIFE TIME [J].

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[19] SIZE EFFECT MODULATION-LIGHT SOURCES - POSSIBILITY OF LED MODE-OPERATION AT ROOM-TEMPERATURE [J].

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SUEMUNE, I .

SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (04) :335-337

[20] QUENCHING OF PHOTOLUMINESCENCE FROM GAAS/ALGAAS SINGLE QUANTUM WELL BY AN ELECTRIC-FIELD AT HIGH-TEMPERATURE [J].

YAMANISHI, M ;

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SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (02) :111-113

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