PULSE-MODULATION OF DH-(GAAL)AS LASERS

被引：19

作者：

OZEKI, T ^{[1
]}

ITO, T ^{[1
]}

机构：

[1] TOSHIBA RES & DEV CTR,ELECTR EQUIPMENT LAB,KAWASAKI,JAPAN

来源：

关键词：

D O I：

10.1109/JQE.1973.1077467

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：388 / 391

页数：4

共 11 条

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[2] BROOM RF, 1970, IEEE J QUANT ELECTRO, VQE 6, P328
[3] CHOWN M, 1970, SEP C TRUNK TEL GUID, P165
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LEE, TP
RIPPER, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 452 - +
[5] JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
HAYASHI, I
PANISH, MB
FOY, PW
SUMSKI, S
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (03) : 109 - &
[6] IKEGAMI T, 1968, IEEE J QUANTUM ELECT, VQE 4, P855
[7] MASER RATE EQUATIONS + SPIKING
KLEINMAN, DA
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1964, 43 (4P2): : 1505 - +
[8] DELAY BETWEEN CURRENT PULSE + LIGHT EMISSION OF GALLIUM ARSENIDE INJECTION LASER ( RISE-TIME LESS THAN 0.2 NSEC 77 DEGREES K E )
KONNERTH, K
LANZA, C
[J]. APPLIED PHYSICS LETTERS, 1964, 4 (07) : 120 - &
[9] OZEKI T, 1971, ANNU M I ELECTRON CO, P825
[10] DIRECT MODULATION OF SEMICONDUCTOR LASERS
PAOLI, TL
RIPPER, JE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (10): : 1457 - +