DEEP LEVELS IN FE-DOPED GAP

被引：11

作者：

DEMBEREL, LA

POPOV, AS

KUSHEV, DB

机构：

[1] Research Laboratory of Semiconductor Physics and Technology, University of Sofia

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 52卷 / 02期

关键词：

D O I：

10.1002/pssa.2210520236

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The properties of iron‐doped GaP crystals are investigated using double injection methods of p–i–n diodes, absorption, and luminescence. Current–voltage characteristics are observed (probably for the first time in GaP) with N‐ and S‐like parts. The results allow to estimate the energy of ionized iron acceptors to 0.87 eV. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：653 / 656

页数：4

共 8 条

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Stafeev V. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P106

[8] OPTICAL PROPERTIES OF GALLIUM PHOSPHIDE GROWN BY FLOATING ZONE .I. REFRACTIVE INDEX AND REFLECTION COEFFICIENT [J].

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MATERIALS RESEARCH BULLETIN, 1969, 4 (10) :781-&

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