DEEP LEVELS IN FE-DOPED INP

被引：34

作者：

DEMBEREL, LA

POPOV, AS

KUSHEV, DB

ZHELEVA, NN

机构：

[1] Research Laboratory of Semiconductor Physics and Technology, University of Sofia

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 52卷 / 01期

关键词：

D O I：

10.1002/pssa.2210520138

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An investigation is made of the properties of Fe‐doped InP crystals by double injection in p‐i‐n diodes, absorption, and luminescence. In the I–U‐characteristics S‐like regions are observed with negative differential resistance. The ionization energy of iron is evaluated to be 0.6 to 0.64 eV. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：341 / 345

页数：5

共 13 条

[1] DOUBLE INJECTION IN DEEP-LYING IMPURITY SEMICONDUCTORS
ASHLEY, KL
MILNES, AG
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 369 - &
[2] BALTENKOV AS, 1976, FIZ TEKH POLUPROV, V10, P1159
[3] GRUSHKO NS, 1975, FIZ TEKH POLUPROV, V9, P343
[4] EVIDENCE FOR DONOR-ACCEPTOR RECOMBINATION IN INP BY TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY
HEIM, U
[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (04) : 445 - &
[5] Lampert M.A., 1970, CURRENT INJECTION SO
[6] DOUBLE INJECTION IN INSULATORS
LAMPERT, MA
[J]. PHYSICAL REVIEW, 1962, 125 (01): : 126 - &
[7] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS
Lucovsky, G.
[J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302
[8] MAEDA K, 1971, JAPAN J APPL PHYS, V9, P71
[9] Milns A. G., 1973, DEEP IMPURITIES SEMI
[10] Negreskul V. V., 1975, FIZ TEKH POLUPROV, V9, P893

← 1 2 →