ON THE CHARACTER OF DEFECTS IN GAAS

[1] TEMPERATURE-DEPENDENCE OF POSITRON LIFETIME IN GAAS CRYSTALS WITH DEFECTS [J]. PRAMANA, 1979, 13 (06) : 625 - &

[2] Bittebierre J., 1986, Materials Science Forum, V10-12, P365, DOI 10.4028/www.scientific.net/MSF.10-12.365

[3] Theory of semiconductor response to charged particles [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (08): : 3104 - 3112

[4] POSITRON LIFETIMES IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2962 - 2964

[5] CORBEL C, 1988, MATER RES SOC S P, V104, P475

[6] TEMPERATURE-DEPENDENCE OF THE ANNIHILATION OF POSITRONS IN SI CONTAINING DIVACANCIES AND QUADRIVACANCIES [J]. PHYSICAL REVIEW B, 1980, 22 (12): : 6135 - 6139

[7] INVESTIGATION OF DEFECTS IN GALLIUM-ARSENIDE USING POSITRON-ANNIHILATION [J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3355 - 3366

[8] INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON [J]. PHYSICAL REVIEW B, 1976, 14 (07): : 2709 - 2714

[9] DEFECTS AND OXYGEN IN SILICON STUDIED BY POSITRONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 102 (02): : 481 - 491

[10] ON THE EFFECT OF BACKSCATTERING OF GAMMA-QUANTA AND STATISTICS IN POSITRON-ANNIHILATION LIFETIME MEASUREMENTS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1981, 26 (04): : 255 - 259

[1] TEMPERATURE-DEPENDENCE OF POSITRON LIFETIME IN GAAS CRYSTALS WITH DEFECTS [J]. PRAMANA, 1979, 13 (06) : 625 - &

[2] Bittebierre J., 1986, Materials Science Forum, V10-12, P365, DOI 10.4028/www.scientific.net/MSF.10-12.365

[3] Theory of semiconductor response to charged particles [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (08): : 3104 - 3112

[4] POSITRON LIFETIMES IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2962 - 2964

[5] CORBEL C, 1988, MATER RES SOC S P, V104, P475

[6] TEMPERATURE-DEPENDENCE OF THE ANNIHILATION OF POSITRONS IN SI CONTAINING DIVACANCIES AND QUADRIVACANCIES [J]. PHYSICAL REVIEW B, 1980, 22 (12): : 6135 - 6139

[7] INVESTIGATION OF DEFECTS IN GALLIUM-ARSENIDE USING POSITRON-ANNIHILATION [J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3355 - 3366

[8] INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON [J]. PHYSICAL REVIEW B, 1976, 14 (07): : 2709 - 2714

[9] DEFECTS AND OXYGEN IN SILICON STUDIED BY POSITRONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 102 (02): : 481 - 491

[10] ON THE EFFECT OF BACKSCATTERING OF GAMMA-QUANTA AND STATISTICS IN POSITRON-ANNIHILATION LIFETIME MEASUREMENTS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1981, 26 (04): : 255 - 259