REACTIVE ION PLATING (RIP) WITH AUXILIARY DISCHARGE AND THE INFLUENCE OF THE DEPOSITION CONDITIONS ON THE FORMATION AND PROPERTIES OF TIN FILMS

被引:25
作者
FLEISCHER, W [1 ]
SCHULZE, D [1 ]
WILBERG, R [1 ]
LUNK, A [1 ]
SCHRADE, F [1 ]
机构
[1] ERNST MORITZ ARNDT UNIV,SEKT PHYS ELEKTR,DDR-22 GREIFSWALD,GER DEM REP
关键词
D O I
10.1016/0040-6090(79)90039-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper we attempt to analyse the processes of reactive evaporation, activated reactive evaporation and reactive ion plating on the basis of earlier theoretical studies. Our initial results concerning the dependence of phase formation on the deposition rate and working gas pressure in reactive evaporation and ion plating indicate that the proposed ideas can in principle be applied and this was also shown analytically by the dependence of the microhardness of TiN films on the pressure. At low partial pressure of nitrogen TiNx films with a stoichiometric coefficient x near unity are not formed. These near-stoichiometric films are of low hardness. The decrease of microhardness with increasing nitrogen pressure (p 624 × 10-2 Pa) can be explained by physical effects, such as the inclusion and scattering of gas. Initial studies on the wear properties of such films have indicated their potential in technological applications. © 1979.
引用
收藏
页码:347 / 356
页数:10
相关论文
共 7 条
[1]  
BUNSHAH RF, 1977, 9TH P PLANS SEM REUT
[2]   INTERACTION OF OXYGEN AND NITROGEN WITH CLEAN TRANSITION-METAL SURFACES [J].
FROMM, E ;
MAYER, O .
SURFACE SCIENCE, 1978, 74 (01) :259-275
[3]  
MATTOX DM, 1974, JPN J APPL PHYS 1 S, V2
[4]   APPLICATIONS OF WEAR-RESISTANT THICK-FILMS FORMED BY PHYSICAL VAPOR-DEPOSITION PROCESSES [J].
NAKAMURA, K ;
INAGAWA, K ;
TSURUOKA, K ;
KOMIYA, S .
THIN SOLID FILMS, 1977, 40 (JAN) :155-167
[5]  
SCHRADE R, 1978, G1 ERNST MOR ARNDT P
[6]  
Shkarofsky J P, 1966, PARTICLE KINETICS PL
[7]   ADHESION OF ION PLATED FILMS AND ENERGIES OF DEPOSITION [J].
TEER, DG .
JOURNAL OF ADHESION, 1977, 8 (04) :289-300