ELECTROMIGRATION PERFORMANCE OF ELECTROLESS PLATED COPPER PD-SILICIDE METALLIZATION

被引：28

作者：

TAO, J ^{[1
]}

CHEUNG, NW ^{[1
]}

HU, CM ^{[1
]}

KANG, HK ^{[1
]}

WONG, SS ^{[1
]}

机构：

[1] STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 08期

关键词：

D O I：

10.1109/55.192782

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electromigration reliability of copper interconnect has been studied under dc, pulse-dc, and bipolar current stressing conditions. Electroless plating was used to selectively deposit Cu in oxide trenches by using Pd silicide as a catalytic layer at the bottom of the trenches to initiate copper deposition. The dc and pulse-dc lifetimes of Cu are found to be about two orders of magnitude longer than that of Al-2%Si at 275-degrees-C, and about four orders of magnitude longer than that of Al-2%Si when extrapolated to room temperature. On the other hand, Cu ac lifetimes are found to be comparable to the ac lifetimes of Al-2%Si. The pulse-dc lifetime of copper interconnects follows the similar frequency and duty factor dependence as aluminum and the prediction of the vacancy relaxation model.

引用

页码：433 / 435

页数：3