SELECTIVE ELECTROLESS COPPER FOR VLSI INTERCONNECTION

[1] AWAYA A, 1989, MAY S VLSI TECHN KYO, P22

[2] BAKOGLU HB, 1987, FEB IEEE INT SOL STA, P308

[3] HU C, 1988, U CALIF EXTENSION CO

[4] KWOK T, 1988, JUN P IEEE VLSI MULT, P436

[5] KWOK T, 1987, JUN P IEEE VLSI MULT, P456

[6] DIFFUSION OF METALS IN SILICON DIOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : 1242 - 1246

[7] NULRY J, 1988, JUN P IEEE VLSI MULT, P453

[8] PAI PL, 1989, JUN P IEEE VLSI MULT, P258

[9] SELECTIVE ELECTROLESS METAL-DEPOSITION FOR VIA HOLE FILLING IN VLSI MULTILEVEL INTERCONNECTION STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (02) : 462 - 466

[1] AWAYA A, 1989, MAY S VLSI TECHN KYO, P22

[2] BAKOGLU HB, 1987, FEB IEEE INT SOL STA, P308

[3] HU C, 1988, U CALIF EXTENSION CO

[4] KWOK T, 1988, JUN P IEEE VLSI MULT, P436

[5] KWOK T, 1987, JUN P IEEE VLSI MULT, P456

[6] DIFFUSION OF METALS IN SILICON DIOXIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : 1242 - 1246

[7] NULRY J, 1988, JUN P IEEE VLSI MULT, P453

[8] PAI PL, 1989, JUN P IEEE VLSI MULT, P258

[9] SELECTIVE ELECTROLESS METAL-DEPOSITION FOR VIA HOLE FILLING IN VLSI MULTILEVEL INTERCONNECTION STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (02) : 462 - 466