LASER-INDUCED INTERACTION OF AMMONIA WITH GAAS(100) .1. DISSOCIATION AND NITRIDATION

被引：74

作者：

ZHU, XY

WOLF, M

HUETT, T

WHITE, JM

机构：

[1] Department of Chemistry and Biochemistry, Center for Materials Chemistry, University of Texas, Austin

来源：

JOURNAL OF CHEMICAL PHYSICS | 1992年 / 97卷 / 08期

关键词：

D O I：

10.1063/1.463745

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

UV laser irradiation of ammonia adsorbed on GaAs(100) leads to molecular desorption an dissociation. A nitride passivation layer can be formed on the GaAs surface at 100 K by simultaneous exposure to ammonia and uv photons in a UHV environment. The nitride layer consists of a mixture of Ga and As nitrides. While the dominating GaN surface species is thermally stable, AsN desorbs below 800 K. Surface NH2 is identified as an intermediate. The implication of this study for selective area passivation and GaN growth is discussed.

引用

页码：5856 / 5867

页数：12

共 34 条

[1] PREDISSOCIATION DYNAMICS OF A-STATE AMMONIA PROBED BY 2-PHOTON EXCITATION SPECTROSCOPY [J].

ASHFOLD, MNR ;

BENNETT, CL ;

DIXON, RN .

CHEMICAL PHYSICS, 1985, 93 (02) :293-306

[2] INFRARED LATTICE-VIBRATIONS AND FREE-ELECTRON DISPERSION IN GAN [J].

BARKER, AS ;

ILEGEMS, M .

PHYSICAL REVIEW B, 1973, 7 (02) :743-750

[3] ADSORPTION AND THERMAL-DECOMPOSITION OF AMMONIA ON A NI(110) SURFACE - ISOLATION AND IDENTIFICATION OF ADSORBED NH2 AND NH [J].

BASSIGNANA, IC ;

WAGEMANN, K ;

KUPPERS, J ;

ERTL, G .

SURFACE SCIENCE, 1986, 175 (01) :22-44

[4] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].

BIEGELSEN, DK ;

BRINGANS, RD ;

NORTHRUP, JE ;

SWARTZ, LE .

PHYSICAL REVIEW B, 1990, 41 (09) :5701-5706

[5] USE OF MULTILAYER TECHNIQUES FOR XPS IDENTIFICATION OF VARIOUS NITROGEN ENVIRONMENTS IN THE SI/NH3 SYSTEM [J].

BISCHOFF, JL ;

LUTZ, F ;

BOLMONT, D ;

KUBLER, L .

SURFACE SCIENCE, 1991, 251 :170-174

[6] REACTION OF SI(100) WITH NH3 - RATE-LIMITING STEPS AND REACTIVITY ENHANCEMENT VIA ELECTRONIC EXCITATION [J].

BOZSO, F ;

AVOURIS, P .

PHYSICAL REVIEW LETTERS, 1986, 57 (09) :1185-1188

[7] PHOTOEMISSION-STUDIES OF THE REACTIONS OF AMMONIA AND N-ATOMS WITH SI(100)-(2X1) AND SI(111)-(7X7) SURFACES [J].

BOZSO, F ;

AVOURIS, P .

PHYSICAL REVIEW B, 1988, 38 (06) :3937-3942

[8] AMMONIA DECOMPOSITION ON SILICON SURFACES STUDIED USING TRANSMISSION FOURIER-TRANSFORM INFRARED-SPECTROSCOPY [J].

DILLON, AC ;

GUPTA, P ;

ROBINSON, MB ;

BRACKER, AS ;

GEORGE, SM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (04) :2222-2230

[9] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J].

DRATHEN, P ;

RANKE, W ;

JACOBI, K .

SURFACE SCIENCE, 1978, 77 (01) :L162-L166

[10]

Ertl G., 1985, LOW ENERGY ELECT SUR, P77

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