STRETCHED-EXPONENTIAL DECAY OF THE LUMINESCENCE IN POROUS SILICON

被引：243

作者：

PAVESI, L

CESCHINI, M

机构：

[1] Dipartimento di Fisica, Universita' di Trento

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.48.17625

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An experimental study of the luminescence time decay in porous silicon as a function of temperature, excitation, and observation energies is reported. The decay line shape is well described by a stretched exponential for a variety of experimental conditions. A hierarchy of waiting times for carrier hopping, of intersite distances, and of site energies result from the analysis of our data

引用

页码：17625 / 17628

页数：4

共 18 条

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