ELECTROPHOTOGRAPHIC PROPERTIES OF RF GLOW DISCHARGE-PRODUCED AMORPHOUS SI-H FILM

被引：27

作者：

YAMAMOTO, N

NAKAYAMA, Y

WAKITA, K

NAKANO, M

KAWAMURA, T

机构：

来源：

关键词：

D O I：

10.7567/JJAPS.20S1.305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：305 / 310

页数：6

共 10 条

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[5] NAKAYAMA Y, 1979, 38TH JSAP FALL M
[6] NEYHART JH, 1966, J PHOT SCI ENG, V10, P126
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SCHER, H
[J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2062 - 2083
[8] NEW HIGH-SENSITIVITY ORGANIC PHOTOCONDUCTOR FOR ELECTROPHOTOGRAPHY
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[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1971, 15 (01) : 75 - +
[9] SHIMIZU I, 1979, 8TH P INT C AM LIQ S
[10] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE
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[J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949