ELECTRIC-RESISTANCE CHANGE MECHANISM OF INDIUM-TIN OXIDE FILM DURING DEPOSITION OF DIELECTRIC OXIDE-FILMS BY RF MAGNETRON SPUTTERING

被引：3

作者：

MATSUOKA, T

KUWATA, J

NISHIKAWA, M

FUJITA, Y

TOHDA, T

ABE, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 06期

关键词：

D O I：

10.1143/JJAP.27.1088

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1088 / 1091

页数：4

相关论文

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