FIELD ION-SCANNING TUNNELING MICROSCOPY STUDY OF C-84 ON THE SI(100) SURFACE

被引：25

作者：

HASHIZUME, T

WANG, XD

NISHINA, Y

SHINOHARA, H

SAITO, Y

SAKURAI, T

机构：

[1] Institute for Materials Research (IMR), Tohoku University, Sendai

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 1A-B期

关键词：

C-84; FULLERENES; STM; SI(100); SI; FCC; SINGLE CRYSTAL;

D O I：

10.1143/JJAP.32.L132

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Initial stage and monolayer/multilayer adsorption of C84 fullerene on the Si(100)2 x 1 surface was investigated by field ion-scanning tunneling microscopy. The C84 molecules reside Stably at room temperature in the trough formed by Si dimer rows. The nearest neighbour distance of the C84 molecules is approximately 14 angstrom. For the first and second layers, only the disordered adsorption geometry was observed. When C84 was deposited while keeping the substrate at 100 to 150-degrees-C, the fcc crystal formation was observed above the third layer with its lattice constant of 17.1 angstrom.

引用

页码：L132 / L134

页数：3

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