SCALING BEHAVIOR OF THE CRITICAL CURRENT OF GRAIN-BOUNDARY JUNCTIONS

被引：30

作者：

DEUTSCHER, G ^{[1
]}

CHAUDHARI, P ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.44.4664

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It has been recently determined experimentally that in Y-Ba-Cu-O grain-boundary junctions the product of the critical current I(c) and of the normal-state resistance R scales with the critical current density J(c). This behavior is different from that of conventional Josephson junctions, for which the product I(c)R is independent of J(c). We show that the observed scaling can be well understood within the framework of short-coherence-length effects in the high-T(c) oxides.

引用

页码：4664 / 4665

页数：2

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