ELECTRON-MICROSCOPE INVESTIGATION OF MICROPLASTIC DEFORMATION MECHANISMS OF SILICON BY INDENTATION

被引：135

作者：

EREMENKO, VG ^{[1
]}

NIKITENK.VI ^{[1
]}

机构：

[1] ACAD SCI USSR,INST SOLID STATE PHYS,CHERNOGOLOVKA,USSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 14卷 / 01期

关键词：

D O I：

10.1002/pssa.2210140139

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：317 / 330

页数：14

共 24 条

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[5] DOZENKO LI, 1967, KRISTALLOGRAFIYA, V12, P480
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[7] EFFECT OF IMPURITIES ON INDIVIDUAL DISLOCATION MOBILITY IN SILICON
EROFEEV, VN
NIKITENKO, VI
OSVENSKII, VB
[J]. PHYSICA STATUS SOLIDI, 1969, 35 (01): : 79 - +
[8] LAMELLAR DEFECTS IN SINGLE CRYSTALS OF SILICON
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[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (02): : 111 - &
[9] GAILITIS IA, 1968, IZV AKAD NAUK SSSR F, V6, P53
[10] Govorkov V. G., 1966, KRISTALLOGRAFIYA, V11, P259