DETECTION OF BULK MICRODEFECTS UNDERNEATH THE SURFACE OF SI WAFER USING INFRARED LIGHT-SCATTERING TOMOGRAPHY

被引：6

作者：

FURUKAWA, J

FURUYA, H

SHINGYOUJI, T

机构：

[1] Central Research Institute, Mitsubishi Materials Corporation, Omiya Saitama, 330

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 11A期

关键词：

INFRARED LIGHT SCATTERING TOMOGRAPHY; BULK MICRODEFECTS; OBLIQUE INCIDENT; TOTAL REFLECTION; UNDERNEATH THE SURFACE;

D O I：

10.1143/JJAP.32.5178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new method has been developed to detect bulk microdefects (BMD) underneath the surface of a Si wafer using infrared light scattering tomography. In this method, infrared light enters from the cleaved surface obliquely and is totally reflected at the surface of the wafer, in order to eliminate the effect of scattering at the surface. BMD not only underneath the surface of the polished silicon wafer, but also underneath the wafer surface on which devices are fabricated, are easily detected by this method.

引用

页码：5178 / 5179

页数：2

共 5 条

[1]

LU TJ, 1991, J CRYST GROWTH, V114, P64, DOI 10.1016/0022-0248(91)90679-Y

[2]

LU TJ, 1991, J CRYST GROWTH, V108, P482

[3] DEVELOPMENT OF NONDESTRUCTIVE BULK MICRO-DEFECT ANALYZER FOR SI WAFERS [J].