CONTROL OF GATE LEAKAGE IN INALAS/INGAAS HEMTS

被引：7

作者：

NEWSON, DJ ^{[1
]}

MERRETT, RP ^{[1
]}

RIDLEY, BK ^{[1
]}

机构：

[1] UNIV ESSEX,WIVENHOE,ESSEX,ENGLAND

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 17期

关键词：

TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19910996

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In0.53Ga0.47As FETs exhibit excess gate leakage, caused by impact ionisation in the channel. In JFETs and HFETs this leads to high gate leakage in the peak gain region. It is shown here that suitably fabricated InAlAs/InGaAs HEMTs can have low gate leakage in the high gain region because band bending leads to a lower collection efficiency for holes generated by impact ionisation.

引用

页码：1592 / 1593

页数：2

共 4 条

[1] MEASUREMENT AND MODELING OF THE INGAAS FETS EXCESS GATE LEAKAGE CURRENT [J].