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MEASUREMENT AND MODELING OF THE INGAAS FETS EXCESS GATE LEAKAGE CURRENT
被引:9
作者
:
CARER, P
论文数:
0
引用数:
0
h-index:
0
CARER, P
CAQUOT, E
论文数:
0
引用数:
0
h-index:
0
CAQUOT, E
RENAUD, JC
论文数:
0
引用数:
0
h-index:
0
RENAUD, JC
NGUYEN, L
论文数:
0
引用数:
0
h-index:
0
NGUYEN, L
SCAVENNEC, A
论文数:
0
引用数:
0
h-index:
0
SCAVENNEC, A
机构
:
来源
:
REVUE DE PHYSIQUE APPLIQUEE
|
1990年
/ 25卷
/ 05期
关键词
:
D O I
:
10.1051/rphysap:01990002505045300
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:453 / 456
页数:4
相关论文
共 7 条
[1]
MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS
[J].
CARNEZ, B
论文数:
0
引用数:
0
h-index:
0
CARNEZ, B
;
CAPPY, A
论文数:
0
引用数:
0
h-index:
0
CAPPY, A
;
KASZYNSKI, A
论文数:
0
引用数:
0
h-index:
0
KASZYNSKI, A
;
CONSTANT, E
论文数:
0
引用数:
0
h-index:
0
CONSTANT, E
;
SALMER, G
论文数:
0
引用数:
0
h-index:
0
SALMER, G
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(01)
:784
-790
[2]
MONOLITHIC GAINAS/INP FET INVERTER AMPLIFIERS FOR LONG-WAVELENGTH OEICS
[J].
DAWE, PJG
论文数:
0
引用数:
0
h-index:
0
机构:
STC Technology Ltd, United Kingdom
DAWE, PJG
;
LEE, WS
论文数:
0
引用数:
0
h-index:
0
机构:
STC Technology Ltd, United Kingdom
LEE, WS
;
ANTELL, GR
论文数:
0
引用数:
0
h-index:
0
机构:
STC Technology Ltd, United Kingdom
ANTELL, GR
;
SPEAR, DAH
论文数:
0
引用数:
0
h-index:
0
机构:
STC Technology Ltd, United Kingdom
SPEAR, DAH
;
BLAND, SW
论文数:
0
引用数:
0
h-index:
0
机构:
STC Technology Ltd, United Kingdom
BLAND, SW
.
ELECTRONICS LETTERS,
1988,
24
(21)
:1349
-1351
[3]
GIRAUDET L, 1987, 17TH ESSDERC BOL, P891
[4]
EXCESS GATE-LEAKAGE CURRENT OF INGAAS JUNCTION FIELD-EFFECT TRANSISTORS
[J].
OHNAKA, K
论文数:
0
引用数:
0
h-index:
0
OHNAKA, K
;
SHIBATA, J
论文数:
0
引用数:
0
h-index:
0
SHIBATA, J
.
JOURNAL OF APPLIED PHYSICS,
1988,
63
(09)
:4714
-4717
[5]
IMPACT IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN (100)-ORIENTED GA1-XINXASYP1-Y
[J].
OSAKA, F
论文数:
0
引用数:
0
h-index:
0
OSAKA, F
;
MIKAWA, T
论文数:
0
引用数:
0
h-index:
0
MIKAWA, T
;
KANEDA, T
论文数:
0
引用数:
0
h-index:
0
KANEDA, T
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1985,
21
(09)
:1326
-1338
[6]
GAINAS MONOLITHIC PHOTORECEIVER INTEGRATING P-I-N/JFET WITH DIFFUSED JUNCTIONS AND A RESISTOR
[J].
RENAUD, JC
论文数:
0
引用数:
0
h-index:
0
RENAUD, JC
;
NGUYEN, NL
论文数:
0
引用数:
0
h-index:
0
NGUYEN, NL
;
ALLOVON, M
论文数:
0
引用数:
0
h-index:
0
ALLOVON, M
;
BLANCONNIER, P
论文数:
0
引用数:
0
h-index:
0
BLANCONNIER, P
;
VUYE, S
论文数:
0
引用数:
0
h-index:
0
VUYE, S
;
SCAVENNEC, A
论文数:
0
引用数:
0
h-index:
0
SCAVENNEC, A
.
JOURNAL OF LIGHTWAVE TECHNOLOGY,
1988,
6
(10)
:1507
-1511
[7]
EXCESS GATE CURRENT ANALYSIS OF JUNCTION GATE FETS BY 2-DIMENSIONAL COMPUTER-SIMULATION
[J].
YAMAGUCHI, K
论文数:
0
引用数:
0
h-index:
0
YAMAGUCHI, K
;
ASAI, S
论文数:
0
引用数:
0
h-index:
0
ASAI, S
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(03)
:362
-369
←
1
→
共 7 条
[1]
MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS
[J].
CARNEZ, B
论文数:
0
引用数:
0
h-index:
0
CARNEZ, B
;
CAPPY, A
论文数:
0
引用数:
0
h-index:
0
CAPPY, A
;
KASZYNSKI, A
论文数:
0
引用数:
0
h-index:
0
KASZYNSKI, A
;
CONSTANT, E
论文数:
0
引用数:
0
h-index:
0
CONSTANT, E
;
SALMER, G
论文数:
0
引用数:
0
h-index:
0
SALMER, G
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(01)
:784
-790
[2]
MONOLITHIC GAINAS/INP FET INVERTER AMPLIFIERS FOR LONG-WAVELENGTH OEICS
[J].
DAWE, PJG
论文数:
0
引用数:
0
h-index:
0
机构:
STC Technology Ltd, United Kingdom
DAWE, PJG
;
LEE, WS
论文数:
0
引用数:
0
h-index:
0
机构:
STC Technology Ltd, United Kingdom
LEE, WS
;
ANTELL, GR
论文数:
0
引用数:
0
h-index:
0
机构:
STC Technology Ltd, United Kingdom
ANTELL, GR
;
SPEAR, DAH
论文数:
0
引用数:
0
h-index:
0
机构:
STC Technology Ltd, United Kingdom
SPEAR, DAH
;
BLAND, SW
论文数:
0
引用数:
0
h-index:
0
机构:
STC Technology Ltd, United Kingdom
BLAND, SW
.
ELECTRONICS LETTERS,
1988,
24
(21)
:1349
-1351
[3]
GIRAUDET L, 1987, 17TH ESSDERC BOL, P891
[4]
EXCESS GATE-LEAKAGE CURRENT OF INGAAS JUNCTION FIELD-EFFECT TRANSISTORS
[J].
OHNAKA, K
论文数:
0
引用数:
0
h-index:
0
OHNAKA, K
;
SHIBATA, J
论文数:
0
引用数:
0
h-index:
0
SHIBATA, J
.
JOURNAL OF APPLIED PHYSICS,
1988,
63
(09)
:4714
-4717
[5]
IMPACT IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN (100)-ORIENTED GA1-XINXASYP1-Y
[J].
OSAKA, F
论文数:
0
引用数:
0
h-index:
0
OSAKA, F
;
MIKAWA, T
论文数:
0
引用数:
0
h-index:
0
MIKAWA, T
;
KANEDA, T
论文数:
0
引用数:
0
h-index:
0
KANEDA, T
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1985,
21
(09)
:1326
-1338
[6]
GAINAS MONOLITHIC PHOTORECEIVER INTEGRATING P-I-N/JFET WITH DIFFUSED JUNCTIONS AND A RESISTOR
[J].
RENAUD, JC
论文数:
0
引用数:
0
h-index:
0
RENAUD, JC
;
NGUYEN, NL
论文数:
0
引用数:
0
h-index:
0
NGUYEN, NL
;
ALLOVON, M
论文数:
0
引用数:
0
h-index:
0
ALLOVON, M
;
BLANCONNIER, P
论文数:
0
引用数:
0
h-index:
0
BLANCONNIER, P
;
VUYE, S
论文数:
0
引用数:
0
h-index:
0
VUYE, S
;
SCAVENNEC, A
论文数:
0
引用数:
0
h-index:
0
SCAVENNEC, A
.
JOURNAL OF LIGHTWAVE TECHNOLOGY,
1988,
6
(10)
:1507
-1511
[7]
EXCESS GATE CURRENT ANALYSIS OF JUNCTION GATE FETS BY 2-DIMENSIONAL COMPUTER-SIMULATION
[J].
YAMAGUCHI, K
论文数:
0
引用数:
0
h-index:
0
YAMAGUCHI, K
;
ASAI, S
论文数:
0
引用数:
0
h-index:
0
ASAI, S
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1978,
25
(03)
:362
-369
←
1
→