GAINAS MONOLITHIC PHOTORECEIVER INTEGRATING P-I-N/JFET WITH DIFFUSED JUNCTIONS AND A RESISTOR

被引:11
作者
RENAUD, JC
NGUYEN, NL
ALLOVON, M
BLANCONNIER, P
VUYE, S
SCAVENNEC, A
机构
关键词
D O I
10.1109/50.7909
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1507 / 1511
页数:5
相关论文
共 15 条
[1]   MONOLITHIC OPTOELECTRONIC INTEGRATION - A NEW COMPONENT TECHNOLOGY FOR LIGHTWAVE COMMUNICATIONS [J].
FORREST, SR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) :2640-2655
[2]  
Hata S., 1986, ECOC 12th European Conference on Optical Communication. Technical Digest, P123
[3]   MONOLITHICALLY INTEGRATED IN0.53GA0.47AS-PIN/INP-MISFET PHOTORECEIVER [J].
KASAHARA, K ;
HAYASHI, J ;
MAKITA, K ;
TAGUCHI, K ;
SUZUKI, A ;
NOMURA, H ;
MATUSHITA, S .
ELECTRONICS LETTERS, 1984, 20 (08) :314-315
[4]   A LOW-POWER HIGH-SPEED ION-IMPLANTED JFET FOR INP-BASED MONOLITHIC OPTOELECTRONIC ICS [J].
KIM, SJ ;
WANG, KW ;
VELLACOLEIRO, GP ;
LUTZE, JW ;
OTA, Y ;
GUTH, G .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (11) :518-520
[5]  
Miura S., 1987, ECOC 87: 13th European Conference on Optical Communication. Technical Digest, P66
[6]  
NGUYEN L, 1987, 7TH ESSDERC, P943
[7]   A LONG-WAVELENGTH OPTICAL RECEIVER USING A SHORT-CHANNEL SI-MOSFET [J].
OGAWA, K ;
OWEN, B ;
BOLL, HJ .
BELL SYSTEM TECHNICAL JOURNAL, 1983, 62 (05) :1181-1188
[8]   MONOLITHIC INTEGRATION OF INGAAS-INP PIN PD WITH MISFET ON STEPLESS SUBSTRATE [J].
OHTSUKA, K ;
SUGIMOTO, H ;
ABE, Y ;
MATSUI, T ;
OGATA, H .
ELECTRONICS LETTERS, 1986, 22 (12) :652-653
[9]  
PRASEUTH JP, 1987, GAAS RELATED COMPOUN, P255
[10]  
RAULIN JY, 1987, GAAS RELATED COMPOUN, P717