A LOW-POWER HIGH-SPEED ION-IMPLANTED JFET FOR INP-BASED MONOLITHIC OPTOELECTRONIC ICS

被引：24

作者：

KIM, SJ

WANG, KW

VELLACOLEIRO, GP

LUTZE, JW

OTA, Y

GUTH, G

机构：

来源：

关键词：

D O I：

10.1109/EDL.1987.26714

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：518 / 520

页数：3

共 12 条

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[2] FULLY ION-IMPLANTED INP JUNCTION FETS
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[J]. ELECTRON DEVICE LETTERS, 1982, 3 (09): : 256 - 258
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PAPANICOLAOU, NA
HENRY, RL
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 273 - 276
[4] BOOS JB, 1983, DEC IEDM, P625
[5] CHENG J, 1985, FEB P OPT FIB COMM C
[6] MONOLITHIC OPTOELECTRONIC INTEGRATION - A NEW COMPONENT TECHNOLOGY FOR LIGHTWAVE COMMUNICATIONS
FORREST, SR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) : 2640 - 2655
[7] PENGELLY RS, 1982, MICROWAVE FIELD EFFE, P37
[8] VELLACOLEIRO GP, 1985, UNPUB OPTICAL SENSIT
[9] INGAAS/INP JUNCTION FIELD-EFFECT TRANSISTORS WITH HIGH TRANSCONDUCTANCE MADE USING METAL ORGANIC VAPOR-PHASE EPITAXY
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NELSON, AW
COLE, S
WONG, S
HENNING, ID
SCOTT, EG
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 626 - 627
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