PLANAR FULLY ION-IMPLANTED INP POWER JUNCTION FETS

[1] Anderson, COMMUNICATION

[2] ARMAND M, 1983, 1983 P IEEE CORN C H

[3] FULLY ION-IMPLANTED INP JUNCTION FETS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (09): : 256 - 258

[4] BOOS JB, 1983, DEC IEDM, P625

[5] DEVLIN WJ, 1978, I PHYS C SER, V45, P510

[6] GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] X-BAND SELF-ALIGNED GATE ENHANCEMENT-MODE INP MISFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 811 - 815

[8] KASAHARDA K, 1983, DEC IEDM TECH DIG, P475

[9] MONOLITHIC INTEGRATION OF A VERY LOW THRESHOLD GAINASP LASER AND METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON SEMI-INSULATING INP [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 643 - 645

[10] THE EFFECT OF INTERFACIAL TRAPS ON THE STABILITY OF INSULATED GATE DEVICES ON INP [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 260 - 267

[1] Anderson, COMMUNICATION

[2] ARMAND M, 1983, 1983 P IEEE CORN C H

[3] FULLY ION-IMPLANTED INP JUNCTION FETS [J]. ELECTRON DEVICE LETTERS, 1982, 3 (09): : 256 - 258

[4] BOOS JB, 1983, DEC IEDM, P625

[5] DEVLIN WJ, 1978, I PHYS C SER, V45, P510

[6] GIBBONS JF, 1975, PROJECTED RANGE STAT

[7] X-BAND SELF-ALIGNED GATE ENHANCEMENT-MODE INP MISFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 811 - 815

[8] KASAHARDA K, 1983, DEC IEDM TECH DIG, P475

[9] MONOLITHIC INTEGRATION OF A VERY LOW THRESHOLD GAINASP LASER AND METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR ON SEMI-INSULATING INP [J]. APPLIED PHYSICS LETTERS, 1982, 40 (08) : 643 - 645

[10] THE EFFECT OF INTERFACIAL TRAPS ON THE STABILITY OF INSULATED GATE DEVICES ON INP [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) : 260 - 267