THE EFFECT OF INTERFACIAL TRAPS ON THE STABILITY OF INSULATED GATE DEVICES ON INP

被引:90
作者
LILE, DL
TAYLOR, MJ
机构
关键词
D O I
10.1063/1.331695
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:260 / 267
页数:8
相关论文
共 30 条
[1]   SURFACE-COMPOSITION AND ETCHING OF III-V SEMICONDUCTORS IN CL-2 ION-BEAMS [J].
BARKER, RA ;
MAYER, TM ;
BURTON, RH .
APPLIED PHYSICS LETTERS, 1982, 40 (07) :583-586
[2]   INP-SIO2 MIS STRUCTURE WITH REDUCED INTERFACE STATE DENSITY NEAR CONDUCTION-BAND [J].
FRITZSCHE, D .
ELECTRONICS LETTERS, 1978, 14 (03) :51-52
[3]  
FRITZSCHE D, 1980, I PHYS C SER, V50, P258
[4]   DETERMINATION OF DISTRIBUTED FIXED CHARGE IN CVD-OXIDE AND ITS VIRTUAL ELIMINATION BY USE OF HCL [J].
GAIND, AK ;
KASPRZAK, LA .
SOLID-STATE ELECTRONICS, 1979, 22 (03) :303-309
[5]  
GROVE AS, 1965, ELECTRO TECHNOL, P40
[6]   EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J].
HEIMAN, FP ;
WARFIELD, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) :167-&
[7]   EFFECT OF PYROLYTIC AL2O3 DEPOSITION TEMPERATURE ON INVERSION-MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR [J].
KOBAYASHI, T ;
OKAMURA, M ;
YAMAGUCHI, E ;
SHINODA, Y ;
HIROTA, Y .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6434-6436
[8]   DRIFT PHENOMENA IN CDSE THIN FILM FETS [J].
KOELMANS, H ;
DEGRAAFF, HC .
SOLID-STATE ELECTRONICS, 1967, 10 (10) :997-&
[9]   EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON [J].
KRIEGLER, RJ ;
CHENG, YC ;
COLTON, DR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) :388-&
[10]   CHARACTERIZATION OF IMPROVED INSB INTERFACES [J].
LANGAN, JD ;
VISWANATHAN, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1474-1477