EFFECT OF PYROLYTIC AL2O3 DEPOSITION TEMPERATURE ON INVERSION-MODE INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

被引：43

作者：

KOBAYASHI, T

OKAMURA, M

YAMAGUCHI, E

SHINODA, Y

HIROTA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.328593

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6434 / 6436

页数：3

共 12 条

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[10]

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